Rajendra K. Mishra, Om Prakash Gupta



Study of Pressure-dependent Gruneisen Parameter for Different Nanosized Germanium materials

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Investigating the Gruneisen parameter of semiconductor materials holds significant relevance for their enhanced utilization in modern technology. The Grüneisen parameter possesses adaptability across multiple scientific and engineering domains, finding utility in a variety of applications. Its use allows for a more comprehensive comprehension of how materials react to alterations in temperature and pressure, thus facilitating enhanced precision in forecasting and offering valuable insights into material behavior. This study delves into the impact of high pressure on the Gruneisen parameter for both bulk Germanium and various Germanium nanomaterial sizes, encompassing dimensions of 13nm, 49nm, and 100nm. The evaluation of volume compression ratios is facilitated by employing the Tait and Birch-Murnaghan equations of state (EOS) in this research. Notably, it was uncovered that the observed high-pressure effects are notably influenced by the particle size being considered. A comparative analysis between the 13nm and 49nm germanium particles highlights that the 100nm germanium particle experiences a more substantial reduction in volume. Furthermore, the present study ventures into theoretical predictions of pressure-dependent Gruneisen parameters across diverse-sized germanium crystals at a reference temperature. Remarkably, the outcomes gleaned from this investigation align with trends observed for other metals in the existing literature, underscoring the consistency of the variation of Gruneisen parameters with volume compressions observed in germanium.


Equation of state; Gruneisen parameter; Isothermal Bulk Modulus; High pressure Compressions; Structural properties; Volume collapse; Nanomaterials


Cite this paper

Rajendra K. Mishra, Om Prakash Gupta. (2023) Study of Pressure-dependent Gruneisen Parameter for Different Nanosized Germanium materials. International Journal of Applied Physics, 8, 44-49


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